Advanced nano-scale testing technologies

Call for Paper

NANOTS2023

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Day 1

  • Opening remarks

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    K. Nakamae

  • Invited Talk

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    (I1) Optical characterization and applications of deep ultraviolet AlGaN light-emitting diodes (K. Kojima)

  • Authors corner

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  • Authors corner

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  • Photonics technology

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    (2) Physical properties evaluation of compound semiconductor wafers by PL imaging (K. Morishima, Y. Yokoyama, K. Ikemura, and T. Nakamura)

  • Photonics technology

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    (3) Estimation of carbon concentrations in GaN crystal substrates based on photoluminescence spectroscopy (K. Sano, H. Fujikura, T. Konno, S. Kaneki, S. Ichikawa, and K. Kojima)

  • Photonics technology

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    (4) Photoluminescence property of semiconductor package and non-luminescence material detection technique (K. Oota)

  • Authors corner

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  • Lunch

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  • Invited Talk

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    (I2) Issues and future trend of power devices (H. Yamamoto)

  • Authors corner

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  • Power Device Analysis I

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    (5) Study on utilization of SAT data in reliability testing of power semiconductors (Y. Take, M. Kato, Y. Kobayashi, and T. Nakazawa)

  • Power Device Analysis I

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    (6) Nanoscale fluctuation analysis on capacitance-voltage profiles of Al2O3/diamond by time-resolved scanning nonlinear dielectric microscopy (K. Yamasue, Y. Ogata, T. Matsumoto, N. Tokuda, and Y. Cho)

  • Power Device Analysis I

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    (7) Using Raman spectroscopy to measure local temperature in semiconductor devices (R. Sugie, T. Uchida, and K. Inoue)

  • Power Device Analysis II

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    (8) Time-resolved photoemission spectroscopy for surface-sensitive evaluation of carrier lifetime in (0001) InGaN film (S. Ichikawa, Y. Matsuda, H. Dojo, M. Funato, Y. Kawakami, and K. Kojima)

  • Power Device Analysis II

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    (9) Quantitative evaluation of P/N junction using DPC/iDPC/dDPC (N. Nakanishi, H. Maeda, S. Sadayama, and Y. Kunimune)

  • Power Device Analysis II

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    (10) Analysis of compound semiconductors using low voltage scanning electron microscope with cathodoluminescence (CL) (Y. Nakajima, N. Asano, T. Ootsuka, S. Kamijo, K. Ikita, Y. Kubota, Y. Okano, M. Kawabata, and S. Asahina)

Day 2

  • Invited Talk

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    (I3) Recent progress on attosecond electron-beam technology (Y. Morimoto)

  • Commercial Session

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    (C1) Development of non-destructive inspection method for solder voids and cracks using deep learning techniques (R. Ueki, M. Hasegawa, and M. Takahashi)

  • Commercial Session

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    (C2) Introduction for advanced nanoscale device characteristics analysis system (J. Fuse, T. Shimamori, Y. Wu, K. Shigeto, and M. Hijikata)

  • Commercial Session

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    (C2) Introduction for advanced nanoscale device characteristics analysis system (J. Fuse, T. Shimamori, Y. Wu, K. Shigeto, and M. Hijikata)

  • Commercial Session

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    (C3) Approach to LSI process diagnosis technique for 65nm and 45nm processes (E. Yagyu, K. Yabe, H. Tateyama, I. Murakami, Y. Yatagawa, K. Asai, and K. Takamori)

  • Commercial Session

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    (C3) Approach to LSI process diagnosis technique for 65nm and 45nm processes (E. Yagyu, K. Yabe, H. Tateyama, I. Murakami, Y. Yatagawa, K. Asai, and K. Takamori)

  • Commercial Session

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    (C4) CAD navigation for sequential EOP: EASY-D (M. Nikaido)

  • Commercial Session

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    (C4) CAD navigation for sequential EOP: EASY-D (M. Nikaido)

  • Commercial Session

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    (C5) CAD-navigation system AZSA-HS (K. Konishi)

  • Commercial Session

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    (C6) Introduction of deep-cooled InGaAs camera for hamamatsu iPHEMOS®-MPX inverted microscope (M. Fujiwara, A. Kataoka, K. Kudo, S. Suzuki, T. Yamada, and Y. Kano)

  • Commercial Session

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    (C7) Excillum’ s microfocus X-ray tube technology for non-destructive submicron resolution (A. Nakano)

  • Commercial Session

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    (C8) 2D FTIR spectroscopic imaging system & zooming infrared microscope (Y. Nakashima, Y. Numajiri, and K. Hamada)

  • Commercial Session

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    (C9) Nanoprobing SEM solution for in situ semiconductor failure analysis (Y. Nakayama, R. Claassen, and S. Ogawa)

  • Commercial Session

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    (C10) Introduction of photo emission and OBIRCH analysis service by applying high voltage (K. Inomata, H. Kawahara, and H. Tsukui)

  • Commercial Session

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    (C11) Introduction of FIB-SEM system JIB-PS500i suitable for TEM lamellae preparation of semiconductor device (Y. Nakajima, M. Kadoi, and M. Shibata)

  • Commercial Session

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    (C12) Introduction of multi-ion species DualBeam application (K. Murata and A. Stokes)

  • Commercial Session

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    (C13) Introduction of technology for structural analysis of semiconductors by ion milling (S. Aida, K. Horinouchi, and Y. Inagi)

  • Commercial Session

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    (C14) TENSOR, dedicated real-time 4D-STEM (N. Suzuki, T. Okawa, and Y. Kodama)

  • Commercial Session

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    (C15) Introduction of ZEISS sample in volume analysis (E. Maeda)

  • Commercial Session

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    (C16) Challenges in failure analysis and how plasma-therm solutions participate to improving the life of engineers and insuring reliable results (T. Lazerand, A. Uvarov, A. Pageau, H. Shibata, H. Saget, and M. Tanimura)

  • Lunch

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  • Equipment and systems

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    (11) Efficient failure analysis using AI image generation (M. Uchida, K. Sugiyama, and K. Oota)

  • Equipment and systems

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    (12) Fast ion species switching in gas field ionization ion sources and its applications (S. Matsubara, H. Shichi, and T. Hashizume)

  • Equipment and systems

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    (13) Improving passive voltage contrast with positive stage bias in scanning electron microscopy (N. Asano, K. Ikita, Y. Nakajima, and S. Asahina)

  • Authors corner

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  • Fault Localization

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    (14) Enhancing imaging resolution of microscopy-based debug techniques with on-chip microelectrodes (K.J.P. Jacobs)

  • Fault Localization

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    (15) Nanoprobing workflow on 5nm FinFET device (H. Wada, H.Y. Choi, C.H. Kang, and L. Tyler)

  • Authors corner

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  • Invited Talk

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    (I4) The and future prospects and expectations for B5G and 6G (T. Watanabe)

  • Authors corner

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  • Evening Session

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    Evening session of NANOTS is a special session for discussing on research trend around the world and the future perspective. Challenges for Failure Analysis listed by EDFAS (Hirotoshi Terada, Hamamatsu Photonics)

Day 3

  • Metrology and Inspection I

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    (16) Development of advanced area inspection SEM GS1000 (A. Ikegami, H. Dohi, Y. Kawamoto, and T. Kondou)

  • Metrology and Inspection I

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    (17) A study on reproducibility improvement of deep learning for defect inspection method using scanning electron microscope (T. Maeda, M. Harada, H. Kawano, and T. Hirai)

  • Metrology and Inspection I

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    (18) A study on the effect of unknown classes in domain adaptation for image classification (D. Nishihara, Y. Midoh, Y. Ng, O. Yamane, M. Takahashi, G. Itoh, J. Shiomi, and N. Miura)

  • Authors corner

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  • Metrology and Inspection II

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    (19) Direct observation of 3D flash memory structure by ultra-high resolution X-ray microscope (K. Omote and R. Hirose)

  • Metrology and Inspection II

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    (20) Development of advanced pattern contour extraction function for underness pattern in BSE see-through image of high voltage SEM (M. Oya, Y. Okamoto, S. Nakazawa, K. Maruyama, Y. Yamazaki, Y. Midoh, and N. Miura)

  • Metrology and Inspection II

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    (21) A relational analysis between physical sample features and electron microscope images (S. Asano, Y. Midoh, J. Shiomi, and N. Miura)

  • Authors corner

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  • Lunch

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  • Tutorial I

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    (T1) Analysis and reliability evaluation methods specific to power devices (Y. Ikemoto, Y. Koshiba, N. Yakumaru, and S. Oya)

  • Authors corner

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  • Tutorial II

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    (T2) Development of atom probe tomography for evaluation of semiconductor device (N. Mayama)

  • Authors corner

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  • Physical Analysis

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    (22) High-sensitivity automatic elemental identification method of STEM-EDS data (T. Ide, T. Takahashi, Y. Shimada, A. Sugiyama, H. Maeda, and Y. Kunimune)

  • Physical Analysis

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    (23) Analysis of quasi-crystal by HAADF (M. Kaneko)

  • Authors corner

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  • Closing remarks

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    K. Nakamae