The following presentation has been selected as the 45th NANO Testing Symposium (NANOTS2025) Best Interested Paper Award and Best Commercial Session Presenter Award.

Best Interested Paper Award

  • Paper: (15)
  • Title:
    • In-situ SEM observation of electron beam-induced local electrical actuation of MOSFETs using GaN semiconductor-based photoelectron beam technology
  • Author:
    • T. Nishtiani(a, D. Sato(a, Y. Arakawa(a, K. Niimi(a, A. Koizumi(a, H. Iijima(a, Y. Honda(b, H. Amano(b
  • Affiliation:
    • a)Photo electron Soul Inc., b)Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University

Best Commercial Session Presenter Award

  • Paper: (C7)
  • Title:
    • Introduction of Semiconductor Device Failure Localization Method LI EBAC
  • Author:
    • T. Shimamori, J. Fuse, Y. Nara, N. Bito
  • Affiliation:
    • Hitachi High-Tech Corporation

Young Researcher Award

  • Paper: (13)
  • Title:
    • Electrical Characterization of Semiconductor Devices using Transient Analysis of Secondary Electrons in SEM
  • Author:
    • S. Minami
  • Affiliation:
    • Hitachi Ltd.
  • Paper: (14)
  • Title:
    • Electrical Property Estimation Using an Electron Microscope
  • Author:
    • S. Soraya
  • Affiliation:
    • Hitachi Ltd.

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