Contents
Tuesday, Nov. 11, a.m. / Life Hall
| 09:20-09:30 | (1)Opening remarks | K. Nakamae | The Institute of NANO Testing |
Preprocessing
Chairman：Masahiko Tsujita
| 09:30-09:55 | (2)Advances in X-ray Source Technology for High-Resolution nanoCT in Semiconductor Packaging Inspection | N. Seimiya(a, N. Achilles(b, L. Michalewicz(b, D. Stickler(b | a)Comet Technologies Japan K.K., b)Comet Yxlon GmbH |
| 09:55-10:20 | (3)The Silicon Thining Process by using Inward Plasma | C. Iwase, R. Kanou, Y. Shirayama, S. Takahashi | Sanyu Co.,Ltd. |
《10:20～10:40 Authors corner & break》
Metrology and Inspection I
Chairman：Toru Koyama
| 10:40-11:05 | (4)Defect Extraction Model Using Schlieren Images in Wafer Back Side Grinding Process | G. Kataoka, K. Komenaka, T. Yokoi, M. Kimoto, R. Furusawa, O. Yamane | KIOXIA Corporation |
| 11:05-11:30 | (5)False Positive Discrimination Technology Using Contrastive Learning for Image Inspection of Semiconductors | Y. Azuma(a, M. Ouchi(b, H. Shindo(c, K. Fukaya(c | a)Hitatchi, b)Hitachi, c)Hitachi High-Tech |
| 11:30-11:55 | (6)Development of Technology to Identify Defect Depths in Ultra-sonic Void Inspection | H. Takayanagi(a, Y. Okada(a, H. Tamura(a, A. Hamaguchi(a, Y. Xiong(b, S. Nishiyama(b | a)KIOXIA Corporation, b)Sandisk G.K |
《11:55～12:15 Authors corner & break》
Luncheon seminar
| 12:15-13:30 | (L1)Hitachi High-Tech Luncheon seminar |
Tuesday, Nov. 11, p.m. / Life Hall
Invited Talk I
Chairman：Hideo Morishita
| 13:30-14:30 | (I1)Generative AI-assisted knowledge building for equipment and maintenance, and developing maintenance applications | T. Hiruta | Hitachi, Ltd. |
《14:30～14:50 Authors corner & break》
Artificial intelligence
Chairman：Hirotoshi Terada
| 14:50-15:15 | (7)AI-Powered Knowledge Management for Nano Testing: A Large Language Model Approach | Y. Midoh | The University of Osaka |
| 15:15-15:40 | (8)Application of SEM Image Generation AI Models to Dimensional Measurement of Semiconductor Patterns | S. Nakamichi, Y. Midoh, S. Asano, J. Shiomi, N. Miura | The University of Osaka |
《15:40～16:00 Authors corner & break》
Metrology and Inspection II
Chairman：Yuki Wakisaka
| 16:00-16:25 | (9)Advanced pattern contour extraction function for see-through BSE images of high voltage SEM | M. Oya(a, Y. Okamoto(a, S. Nakazawa(a, K. Maruyama(a, Y. Yamazaki(a, S. Murakami(b, Y. Midoh(b, N. Miura(b | a)TASMIT, Inc., b)The University of Osaka |
| 16:25-16:50 | (10)Effectiveness Evaluation of Contour Extraction Approaches for SEM Images of Semiconductor Multilayer Patterns | S. Murakami(a, M. Oya(b, Y. Okamoto(b, S. Nakazawa(b, K. Maruyama(b, Y. Yamazaki(b, Y. Midoh(a, N. Miura(a | a)The University of Osaka, b)TASMIT, Inc. |
《16:50～17:10 Authors corner & break》
Wednesday, Nov. 12, a.m. / Life Hall
Equipment and systems
Chairman：Shunsuke Asahina
| 09:30-09:55 | (11)In-situ SEM Nanoscale Mechanical Testing for Characterizing Single-Walled Carbon Nanotubes | T. Namazu | Kyoto University of Advanced Science |
| 09:55-10:20 | (12)Correlative analysis between SEM voltage contrast imaging and AFM local electric propery measurement | T. Aiso, T. Sunaoshi, S. Takeuchi | Hitachi High-Tech Corporation |
《10:20～10:40 Authors corner & break》
Commercial Session
Chairman：Hitoshi Maeda
| 10:40-10:47 | (C1)Introduction to Alps Alpine’s Semiconductor Design Capabilities | Y. Hattori | IC Engineering Dept. |
| 10:47-10:54 | (C2)Hamamatsu Photonics TD Imaging, a new method for thermal measurement using Emission Microscopy. | K. Koshikawa | TOKI COMMERCIAL CO.,LTD. |
| 10:54-11:01 | (C3)Introduction of Zoom Scan for High-Resolution CT Imaging | N. Seimiya(a, N. Achilles(b, L. Michalewicz(b | a)Comet Technologies Japan K.K., b)Comet Yxlon GmbH |
| 11:01-11:08 | (C4)Recent Enhancement of LAVIS-plus for Failure Analysis | T. Imoto | TOOL Corporation |
| 11:08-11:15 | (C5)Imina Technologies Application of Nanoprobing Method to Semiconductor Device Failure Analysis | Y. Nakayama | APOLLOWAVE Corporation |
| 11:15-11:22 | (C6)Optimized Prober Shuttle for Failure Analysis Applications | S. Kamada, K. Takahashi | AD Science Inc. |
| 11:22-11:29 | (C7)Introduction of Semiconductor Device Failure Localization Method LI EBAC | T. Shimamori, J. Fuse, Y. Nara, N. Bito | Hitachi High-Tech Corporation |
| 11:29-11:36 | (C8)The Thermo Fisher Scientific MK4 ESD Simulator and Latch-Up Tester Provides the Highest Throughput and Most Extensive Features in Industry | H. Tanaka, M. Hernandez | Thermo Fisher Scientific |
| 11:36-11:43 | (C9)Introducing new functions of the CAD navigation system “AZSA-HS” | S. Isa | Sales |
| 11:43-11:50 | (C10)Real-time dedicated 4D-STEM; TENSOR | S. Taga, Y. Kodama, N. Suzuki | TOYO Corporation |
| 11:50-11:57 | (C11)新開発のエンクロージャーと自動化機能を搭載した ハイエンドFE-SEM の紹介 | Y. Uetake | JEOL |
| 11:57-12:04 | (C12)The Thermo Fisher Scientific Talos F200E (S)TEM Efficiency and Reliability for Each Sample | H. Tanaka, M. Schneider | Thermo Fisher Scientific |
| 12:04-12:11 | (C13)SiC MOSFET固有の劣化モード(AC-BTI)の評価 | K. Takamori | Oki Engineering Co., Ltd. |
Luncheon seminar
| 12:11-13:26 | (L2)JEOL Luncheon seminar |
Wednesday, Nov. 12, p.m. / Life Hall
Invited Talk II
Chairman：Yuichiro Yamazaki
| 13:26-14:26 | (I2)Rapidus’ Challenge and the Inspection and Measurement Technology that Supports It | H. Akahori | Rapidus Co., Ltd. |
《14:26～14:31 Group Photo》
《14:31～14:46 Authors corner & break》
Metrology and Inspection III
Chairman：Kiyoshi Nikawa
| 14:46-15:11 | (13)Electrical Property Estimation Using an Electron Microscope | S. Soraya(a, N. Yohei(a, S. Minami(a, O. Kazuo(b | a)HITACHI.LTD, b)Hitachi High-Tech Corporation |
| 15:11-15:36 | (14)Electrical Characterization of Semiconductor Devices using Transient Analysis of Secondary Electrons in SEM | S. Minami(a, Y. Shirasaki(a, Y. Nakamura(a, K. Yachi(b | a)Hitachi Ltd,., b)Hitachi High-Tech Corp., |
| 15:36-16:01 | (15)In-situ SEM observation of electron beam-induced local electrical actuation of MOSFETs using GaN semiconductor-based photoelectron beam technology | T. Nishtiani(a, D. Sato(a, Y. Arakawa(a, K. Niimi(a, A. Koizumi(a, H. Iijima(a, Y. Honda(b, H. Amano(b | a)Photo electron Soul Inc., b)Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University |
《16:01～16:21 Authors corner & break》
《16:21～17:00 NANOTS2024 Awards etc.》
Evening Session
Chairman：Koji Nakamae
| 18:00-20:00 | Recent activities related to semiconductor failure analysis technology in JEITA (Japan Electronics and Information Technology Industries Association) and REAJ (Reliability Engineering Association of Japan) | K. Nikawa | Device Evaluation Technology Laboratory |
Thursday, Nov. 13, a.m. / Science Hall
Invited Talk III
Chairman：Yasuhisa Higuchi
| 09:30-10:30 | (I3)Fundamentals and Trends of Semiconductor Quantum Bit Research | T. Kodera | Institute of Science Tokyo |
《10:30～10:50 Authors corner & break》
Metrology and Inspection IV
Chairman：Makoto Sakakibara
| 10:50-11:15 | (16)Comprehensive Analysis of High-bandwidth Memory (HBM) with Helios 5 Laser PFIB: Integrating 2D High-Resolution SEM Imaging and 3D Metrology | H. Lin, X. Hu, A. S. Hall, J. Zhou, R. Dai, V. Yang | Thermo Fisher Scientific |
| 11:15-11:40 | (17)Assessment of topography metrology using in-line SEM | A. Hiroaki, S. Yusaku, I. Chihiro, T. Hironobu, H. Akira | KIOXIA Corporation. |
《11:40～12:00 Authors corner & break》
《12:00～13:15 Lunch Break》
Thursday, Nov. 13, p.m. / Science Hall
Tutorial
Chairman：Kazunobu Kojima
| 13:15-14:15 | (18)Visualization Technology for Lattice Defects Distributed over the Entire Surface of a Semiconductor Wafer | Y. Yao | Mie University |
《14:15～14:35 Authors corner & break》
Physical Analysis
Chairman：Yasuo Cho
| 14:35-15:00 | (19)Chemical state observation using photomission electron microscopy | T. Taniuchi, H. Fujiwara, M. Okawa, C. Bareille, S. Shin | The university of Tokyo |
| 15:00-15:25 | (20)A new method for visualizing local structure distribution in amorphous materials: nanoscale analysis by combining STEM-EELS and deformation distance indices | Y. Yuzawa, T. Asano, K. Nakamura, Y. Aiba, D. Hagishima, H. Tanaka | Kioxia Corp. |
《15:25～15:45 Authors corner & break》
Power Device Analysis
Chairman：Kiyoshi Nikawa
| 15:45-16:10 | (21)Visualization of low concentration diffusion layers in power semiconductor devices using TCAD simulation | T. Oyama | Fuji Electric Co.,Ltd. |
| 16:10-16:35 | (22)Evaluation of the Effectiveness of “Spectrum Image” Using Auger Electron Spectroscopy for SiC Device Analysis | K. Ikita, F. Nabeshima, T. Uchida, N. Taguchi, A. Tanaka, T. Ohama, K. Yokouchi, K. Tsutsumi | JEOL Ltd. |
| 16:35-17:00 | (23)Local DLTS/CV profiling of a SiO₂/SiC interface by variable-temperature scanning nonlinear dielectric microscopy | K. Yamasue | Tohoku University |
《17:00～17:20 Authors corner & break》
| 17:20-17:25 | (24)Closing remarks | K. Nakamae | The Institute of NANO Testing |