Contents
NANOTS2025
Best Interested Paper Award
- Paper: (15)
- Title:
- In-situ SEM observation of electron beam-induced local electrical actuation of MOSFETs using GaN semiconductor-based photoelectron beam technology
- Author:
- T. Nishtiani(a, D. Sato(a, Y. Arakawa(a, K. Niimi(a, A. Koizumi(a, H. Iijima(a, Y. Honda(b, H. Amano(b
- Affiliation:
- a)Photo electron Soul Inc., b)Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University
Best Commercial Session Presenter Award
- Paper: (C7)
- Title:
- Introduction of Semiconductor Device Failure Localization Method LI EBAC
- Author:
- T. Shimamori, J. Fuse, Y. Nara, N. Bito
- Affiliation:
- Hitachi High-Tech Corporation
Young Researcher Award
- Paper: (13)
- Title:
- Electrical Characterization of Semiconductor Devices using Transient Analysis of Secondary Electrons in SEM
- Author:
- S. Minami
- Affiliation:
- Hitachi Ltd.
- Paper: (14)
- Title:
- Electrical Property Estimation Using an Electron Microscope
- Author:
- S. Soraya
- Affiliation:
- Hitachi Ltd.
NANOTS2024
Best Interested Paper Award
- Paper: (13)
- Title:
- Evaluation of EBAC sensitivity improvement using lock-in amplifier
- Author:
- Y. Katakura, M. Tsujita, T. Kawamura
- Affiliation:
- Sony Semiconductor Manufacturing Corporation
Best Commercial Session Presenter Award
- Paper: (C9)
- Title:
- Visualization of p-n junctions of SiC devices using “Spectrum Image” using the Auger Electron Spectrometer (JAMP-9510F)
- Author:
- K. Ikita, F. Nabeshima, K. Tsutsumi
- Affiliation:
- SA business Unit, JEOL Ltd.