Advanced nano-scale testing technologies

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Time Table

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1日目

  • Opening remarks

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    (1) Opening remarks (K. Nakamae)

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  • Invited Talk

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    (I1) Development of an integrated measurement system for management of nanomaterials, and standardization of output data formats of measurement and analysis instruments (S. Ichimura)

    中前幸治 中前幸治

  • Metrology and Inspection I

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    (2) The Roughness Control in The Wafer Thinning Process for Failure Analysis Samples (Y. I Kawamura, A. Uvarov, A. Pageau, H. Shibata, T. Lazerand)

    小瀬洋一 小瀬洋一

  • Metrology and Inspection I

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    (3) Evaluation of hole shape using roundness and circularity for process evaluation (H. Nakao, W. J. Know, C. Kang, H. Tanaka)

    小瀬洋一 小瀬洋一

  • Lunch

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    Lunch Break

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  • Lunch

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    Lunch Break

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  • Invited Talk

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    (I2) Overview of generative AI implementation in industrial manufacturing Talkative Products’ business and technical challenges (M. Naemura)

    樋口裕久 樋口裕久

  • Metrology and Inspection II

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    (4) Automated cross-sectional SEM observation technology using image recognition of semiconductor-device structures (T. Dobashi, H. Yamamoto, T. Ohmori)

    姜帥現 姜帥現

  • Metrology and Inspection II

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    (5) A generative model for SEM images of semiconductor line patterns and its application in metrology (S. Asano, Y. Midoh, J. Shiomi, N. Miura)

    姜帥現 姜帥現

  • Metrology and Inspection III

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    (6) A study of robust pattern contour extraction using contour vibration network (S. Murakami, M. Oya, Y. Okamoto, S. Nakazawa, K. Maruyama, Y. Yamazaki, Y. Midoh, N. Miura)

    朝比奈俊輔 朝比奈俊輔

  • Metrology and Inspection III

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    (7) Advanced contour extraction of lower layer patterns for see through BSE image of high voltage SEM (M. Oya, Y. Okamoto, S. Nakazawa, K. Maruyama, Y. Yamazaki, S. Murakami, Y. Midoh, N. Miura)

    朝比奈俊輔 朝比奈俊輔

2日目

  • Metrology and Inspection IV

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    (8) Time-resolved measurement using pulsed scanning electron microscope equipped with NEA secmiconductor photocathode as electron source (H. Morishita, T. Ohshima,M. Kuwahara, T. Agemura, Y. Ose, D. Takane, T. Saito)

    山崎裕一郎 山崎裕一郎

  • Metrology and Inspection IV

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    (9) Relationship between contrast formation in the mirror electron images and the distribution of crystal defects in polishing damage introduced on the surface of SiC wafers. (H. Sako, S. Hayashi, K. Ohira, K. Kobayashi, T. Isshiki)

    山崎裕一郎 山崎裕一郎

  • Commercial Session

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    (C1) High-speed sample processing system by pulse laser (Mei Shimada)

    前田一史 前田一史

  • Commercial Session

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    (C2) Effectiveness of CAD-Navigation Tools in Failure Analysis using EOP (T. Imoto, K. Hirai)

    前田一史 前田一史

  • Commercial Session

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    (C3) Introduction of Sequencer software　U15707-03 for Emission microscope (Y. Kano, M. Fujiwara, K. Kudo, S. Suzuki, T. Yamada)

    前田一史 前田一史

  • Commercial Session

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    (C4) Emission microscopes and peripheral equipment (Y. Nakashima, K. Koshikawa, Y. Numajiri)

    前田一史 前田一史

  • Commercial Session

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    (C5) Imina Technologies Nano probing system (Y. Nakayama)

    前田一史 前田一史

  • Commercial Session

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    (C6) Unveiling the Advantages of the Thermo Fisher Hyperion II AFM-based Nanoprobing System in Transistor Characteriza-tion and Fault Localization (Y. Koya)

    前田一史 前田一史

  • Commercial Session

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    (C7) Introduction of EBAC Image Analysis Software Image Data Manager (J. Fuse, T. Shimamori, Y. Wu, M. Ozawa, M. Watahiki, N. Bito, M. Hijikata)

    前田一史 前田一史

  • Commercial Session

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    (C8) Analysis system AZSA series (K. Konishi)

    前田一史 前田一史

  • Commercial Session

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    (C9) オージェ電子分光装置(JAMP-9510F)による “Spectrum Image”を用いたSiCデバイスpn接合の可視化 (K. Ikita)

    前田一史 前田一史

  • Commercial Session

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    (C10) Introduction of new DualBeam system, Helios 6 HD (T. Muneta, K. Murata)

    前田一史 前田一史

  • Commercial Session

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    (C11) Progresses of TEM lamella preparation workflows in Carl Zeiss Japan (T. Kohata)

    前田一史 前田一史

  • Commercial Session

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    (C12) Non-contact mobility and sheet resistance measurement technology for SiC/GaN and most new semiconductor materials (I. Kato, S. Salam, M. Kumadaki)

    前田一史 前田一史

  • Commercial Session

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    (C13) Electrical Defect measurement of SiC/GaN and other WideGap semiconductors (I. Kato, S. Salam, M. Kumadaki)

    前田一史 前田一史

  • Commercial Session

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    (C14) Construction of Evaluation Criteria in Fin-FET Structures for LSI Process Diagnosis (N.Otani, E.Yagyu, H.Tateyama, I.Murakami, Y. Yatagawa, K.Asai, K.Takamori)

    前田一史 前田一史

  • Hitachi High-Tech Luncheon Seminar

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    Hitachi’s new nanoprobing system and FIB-SEM technology equipped with AI functions

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  • Equipment and systems

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    (10) X-ray nano-tomography enables high-resolution investigations from micro-bumps to hybrid bonding in advanced packaging (T. Dreier, D. Nilsson, S. Tanaka)

    二川清 二川清

  • Equipment and systems

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    (11) Semiconductor application by novel nano X-ray CT device (T. Ogaki)

    二川清 二川清

  • Fault Localization

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    (12) High-precision localization technique using AI (K. Oota, K. Sugiyama, M. Uchida)

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  • Fault Localization

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    (13) Evaluation of EBAC sensitivity improvement using lock-in amplifier (Y. Katakura)

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  • Invited Talk

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    (I3) Development of SiC semiconductors at Mirise Technologies (tentative) (H. Fujiwara)

    中前幸治 中前幸治

  • Evening Session

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    Evening session of NANOTS is a special session for discussing on research trend around the world and the future perspective. Introduction of P&A workshop activities (T. Koyama)

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3日目

  • Invited Talk

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    (I4) CrystalDefectCharacterizationTechnologyof WidegapSemiconductorsusing Multiphoton-ExcitationPhotoluminescence (T. Tanikawa)

    寺田 浩敏 寺田 浩敏

  • Photonics technology

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    (14) Evaluation of crystal quality by omnidirectional PL spectroscopy (K. Suzuki)

    小島一信 小島一信

  • Photonics technology

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    (15) Evaluation of damage depth by ion-implantation process using plan-view cathodoluminescence (R. Sugie)

    小島一信 小島一信

  • Lunch

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    Lunch Break

  • Invited Talk

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    (I5) The Current Status and Future Prospects of Diamond Power Devices — The Story of the Founding of a Deep Tech Start-Up — (T. Fujishima)

    小山徹 小山徹

  • Power Device Analysis

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    (16) Analysis of compound semiconductors using low accelerating voltage SEM and various CL detectors (T. Otsuka, Y. Nakajima, S. Asahina, T. Nagoshi, Y. Okano)

    辻田順彦 辻田順彦

  • Power Device Analysis

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    (17) Quantitative evaluation of 3C-SiC/4H-SiC stacked structure MOS interface using scanning nonlinear dielectric microscopy (Y. Cho, H. Nagasaw, M. Sakuraba, S. Sato)

    辻田順彦 辻田順彦

  • Physical Analysis

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    (18) Case Study of Machine Learning Utilization in Semiconductor Analysis: Automation of Wire Bond Alloy Ratio Measurement (M. Sasaki)

    二川清 二川清

  • Physical Analysis

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    (19) Analysis of impurity doping in 3D GaN nanowire crystal (N. Sone, A. Nomura, R. Okuda, S. Kamiyama, T. Takeuchi, M. Iwaya)

    二川清 二川清

  • Closing remarks

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    (20) Closing remarks (K. Nakamae)